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Navicat Serial Number: 1201004. Navicat Navicat Premium 15 Crack keygen latest download key Navicat Premium 15 Crack keygen latest. Navicat Premium 15 Crack is a tool mostly used to manage your database and connect many databases such as MySQL, and PostgreSQLÂ . Navicat Premium 15 is a tool mostly used to manage your database and connect many databases such as MySQL, and PostgreSQLÂ . Support regarding all Navicat’s questions or issues, questions regarding a paid support. Navicat Premium 15, Navicat Premium 15 for MySQL, Navicat Premium 15 for PostgreSQL, Navicat Premium 15 for Oracle, Navicat Premium 15 for MS SQL, Navicat Premium 15 for MS SQL Server.1. Field of the Invention The present invention relates generally to a flash memory device and, more particularly, to a method for fabricating a flash memory device and a method for fabricating a high-integration flash memory device. 2. Description of the Related Art An electrically erasable programmable read only memory (EEPROM) includes a floating gate and a control gate for storing data by changing the threshold voltage of a channel formed between source and drain. The flash memory, which is a non-volatile memory, is used as a memory device by programming data when power is turned off. One of the high-integration techniques of the flash memory is a method of forming a vertical source/drain on a silicon substrate. FIGS. 1A to 1G are cross-sectional diagrams illustrating a method of fabricating a flash memory device according to a conventional technique. Referring to FIG. 1A, a tunneling dielectric layer (T-dielectric layer) 12 is formed over a semiconductor substrate 11 having a source region and a drain region. The tunneling dielectric layer 12 is formed with a thickness of about 100 angstrom. Referring to FIG. 1B, a floating gate (FG) layer and a gate insulating layer are sequentially formed over the semiconductor substrate 11 including the tunneling dielectric layer 12. The floating gate layer and the gate insulating layer are typically formed of silicon oxide and silicon nitride, respectively. Referring to FIG. 1C, a photoresist pattern 13, which may be a photolithographic process, is formed over the gate insulating layer and the tunneling dielect c6a93da74d